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@ARTICLE{Bengel:972102,
author = {Bengel, Christopher and Zhang, Kaihua and Mohr, Johannes
and Ziegler, Tobias and Wiefels, Stefan and Waser, R. and
Wouters, Dirk and Menzel, Stephan},
title = {{T}ailor-made synaptic dynamics based on memristive
devices},
journal = {Frontiers in electronic materials},
volume = {3},
issn = {2673-9895},
address = {Lausanne},
publisher = {Frontiers Media},
reportid = {FZJ-2023-01070},
pages = {1061269},
year = {2023},
abstract = {The proliferation of machine learning algorithms in
everyday applications such as image recognition or language
translation has increased the pressure to adapt underlying
computing architectures towards these algorithms.
Application specific integrated circuits (ASICs) such as the
Tensor Processing Units by Google, Hanguang by Alibaba or
Inferentia by Amazon Web Services were designed specifically
for machine learning algorithms and have been able to
outperform CPU based solutions by great margins during
training and inference. As newer generations of chips allow
handling of and computation on more and more data, the size
of neural networks has dramatically increased, while the
challenges they are trying to solve have become more
complex. Neuromorphic computing tries to take inspiration
from biological information processing systems, aiming to
further improve the efficiency with which these networks can
be trained or the inference can be performed. Enhancing
neuromorphic computing architectures with memristive devices
as non-volatile storage elements could potentially allow for
even higher energy efficiencies. Their ability to mimic
synaptic plasticity dynamics brings neuromorphic
architectures closer to the biological role models. So far,
memristive devices are mainly investigated for the emulation
of the weights of neural networks during training and
inference as their non-volatility would enable both
processes in the same location without data transfer. In
this paper, we explore realisations of different synapses
build from memristive ReRAM devices, based on the Valence
Change Mechanism. These synapses are the 1R synapse, the NR
synapse and the 1T1R synapse. For the 1R synapse, we propose
three dynamical regimes and explore their performance
through different synapse criteria. For the NR synapse, we
discuss how the same dynamical regimes can be addressed in a
more reliable way. We also show experimental results
measured on ZrOx devices to support our simulation based
claims. For the 1T1R synapse, we explore the trade offs
between the connection direction of the ReRAM device and the
transistor. For all three synapse concepts we discuss the
impact of device-to-device and cycle-to-cycle variability.
Additionally, the impact of the stimulation mode on the
observed behavior is discussed.},
cin = {PGI-7 / JARA-FIT / PGI-10},
ddc = {540},
cid = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
I:(DE-Juel1)PGI-10-20170113},
pnm = {5233 - Memristive Materials and Devices (POF4-523) /
BMBF-16ME0399 - Verbundprojekt: Neuro-inspirierte
Technologien der künstlichen Intelligenz für die
Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0399) /
BMBF-16ME0398K - Verbundprojekt: Neuro-inspirierte
Technologien der künstlichen Intelligenz für die
Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0398K) /
ACA - Advanced Computing Architectures (SO-092)},
pid = {G:(DE-HGF)POF4-5233 / G:(DE-82)BMBF-16ME0399 /
G:(DE-82)BMBF-16ME0398K / G:(DE-HGF)SO-092},
typ = {PUB:(DE-HGF)16},
doi = {10.3389/femat.2023.1061269},
url = {https://juser.fz-juelich.de/record/972102},
}