% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@INPROCEEDINGS{Schnedler:972158,
      author       = {Schnedler, Michael and Wang, Yuhan and Lan, Qianqian and
                      Zheng, Fengshan and Freter, Lars and Lu, Yan and Breuer, Uwe
                      and Eisele, Holger and Carlin, J. and Butté, J. and
                      Grandjean, N. and Dunin-Borkowski, Rafal and Ebert, Philipp},
      title        = {{S}urface {C}alibrated {E}lectron {H}olography: {A}nomalous
                      {S}train {R}elaxation and {M}inimization of {P}olarization
                      {C}hanges at {III}-{N}itride {H}etero-{I}nterfaces},
      reportid     = {FZJ-2023-01102},
      year         = {2023},
      abstract     = {Polarization and electron affinity changes at
                      Al0.06Ga0.94N/GaN and In0.05Ga0.95N/ Al0.06Ga0.94N
                      interfaces are quantified by off-axis electron holography
                      (EH) in transmission electron microscopy (TEM), in
                      conjunction with scanning tunneling microscopy and
                      spectroscopy, as well as self-consistent simulations of the
                      electrostatic potential and electron phase maps. The central
                      problem of quantitative EH is that at the surfaces of the
                      thin TEM lamellae a defect-induced pinning occurs, which
                      alters the phase contrast. Therefore, we calibrated the
                      electron optical phase maps using a delta-doped layer at the
                      GaN buffer/substrate interface by determining the energy of
                      the pinning level at the surface to 0.69 eV above the VBM
                      (consistent with pinning by nitrogen vacancies). The such
                      calibrated EH provides quantification of the key interface
                      properties: The biaxially relaxed In0.05Ga0.95N/
                      Al0.06Ga0.94N interface exhibits polarization and electron
                      affinity changes as theoretically expected. However, at the
                      Al0.06Ga0.94N/GaN interface anomalous lattice relaxations
                      and vanishing polarization and electron affinity changes
                      occur, whose underlying physical origin is anticipated to be
                      total energy minimization by the minimization of Coulomb
                      interactions between the polarization-induced interface
                      charges.},
      month         = {Jan},
      date          = {2023-01-15},
      organization  = {48th Conference on the Physics and
                       Chemistry of Surfaces and Interfaces,
                       Los Angeles (USA), 15 Jan 2023 - 19 Jan
                       2023},
      subtyp        = {Plenary/Keynote},
      cin          = {ER-C-1},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {5351 - Platform for Correlative, In Situ and Operando
                      Characterization (POF4-535)},
      pid          = {G:(DE-HGF)POF4-5351},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/972158},
}