Home > Publications database > Electrostatic shaping of magnetic transition regions in La0.7Sr0.3MnO3 > print |
001 | 972163 | ||
005 | 20230210201822.0 | ||
037 | _ | _ | |a FZJ-2023-01107 |
041 | _ | _ | |a English |
100 | 1 | _ | |a Lan, Qianqian |0 P:(DE-Juel1)173944 |b 0 |u fzj |
111 | 2 | _ | |a 48th Conference on the Physics and Chemistry of Surfaces and Interfaces |g PCSI 48 |c Los Angeles |d 2023-01-15 - 2023-01-19 |w USA |
245 | _ | _ | |a Electrostatic shaping of magnetic transition regions in La0.7Sr0.3MnO3 |
260 | _ | _ | |c 2023 |
336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
336 | 7 | _ | |a Other |2 DataCite |
336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
336 | 7 | _ | |a conferenceObject |2 DRIVER |
336 | 7 | _ | |a LECTURE_SPEECH |2 ORCID |
336 | 7 | _ | |a Conference Presentation |b conf |m conf |0 PUB:(DE-HGF)6 |s 1676026482_23897 |2 PUB:(DE-HGF) |x Plenary/Keynote |
520 | _ | _ | |a We report a magnetic transition region in La0.7Sr0.3MnO3 with gradually changing magnitude of magnetization, but no rotation, stable at all temperatures below TC. Spatially-resolved magnetization, composition and Mn valence data reveal that the magnetic transition region is induced by a subtle Mn composition change, leading to a charge transfer at the interface due to carrier diffusion and drift. The electrostatic shaping of the magnetic transition region is mediated by the Mn valence which affects both, magnetization by Mn3+-Mn4+ double exchange interaction and free carrier concentration. |
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700 | 1 | _ | |a Wang, C. |0 P:(DE-HGF)0 |b 1 |
700 | 1 | _ | |a Jin, Lei |0 P:(DE-Juel1)145711 |b 2 |u fzj |
700 | 1 | _ | |a Schnedler, Michael |0 P:(DE-Juel1)143949 |b 3 |u fzj |
700 | 1 | _ | |a Freter, Lars |0 P:(DE-Juel1)176471 |b 4 |u fzj |
700 | 1 | _ | |a Fischer, Kurt |0 P:(DE-HGF)0 |b 5 |
700 | 1 | _ | |a Ebert, Philipp |0 P:(DE-Juel1)130627 |b 6 |e Corresponding author |u fzj |
700 | 1 | _ | |a Dunin-Borkowski, Rafal |0 P:(DE-Juel1)144121 |b 7 |u fzj |
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910 | 1 | _ | |a Department of Physics, Southern University of Science and Technology, Shenzhen 518055, People’s Republic of China |0 I:(DE-HGF)0 |b 1 |6 P:(DE-HGF)0 |
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910 | 1 | _ | |a Department of Mechanical and Electrical Engineering, National Institute of Technology, Tokuyama College, Gakuendai, Shunan, Yamaguchi, 745-8585, Japan |0 I:(DE-HGF)0 |b 5 |6 P:(DE-HGF)0 |
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914 | 1 | _ | |y 2023 |
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