Hauptseite > Publikationsdatenbank > Redox-based memristive switching in metal oxides - The valence change mechanism > print

001     996709
005     20230228121559.0
037 _ _ |a FZJ-2023-01138
100 1 _ |a Waser, R.
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111 2 _ |a 5th Int. Conference on Memristive Materials
|c Boston
|d 2022-11-30 - 2022-12-02
|w USA
245 _ _ |a Redox-based memristive switching in metal oxides - The valence change mechanism
260 _ _ |c 2022
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a Other
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336 7 _ |a INPROCEEDINGS
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536 _ _ |a 5233 - Memristive Materials and Devices (POF4-523)
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536 _ _ |a BMBF-16ME0399 - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0399)
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536 _ _ |a BMBF-16ME0398K - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0398K)
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536 _ _ |a DFG project 167917811 - SFB 917: Resistiv schaltende Chalkogenide für zukünftige Elektronikanwendungen: Struktur, Kinetik und Bauelementskalierung "Nanoswitches" (167917811)
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536 _ _ |a Advanced Computing Architectures (aca_20190115)
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700 1 _ |a Dittmann, Regina
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700 1 _ |a Menzel, Stephan
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909 C O |p VDB
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910 1 _ |a Forschungszentrum Jülich
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913 1 _ |a DE-HGF
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914 1 _ |y 2022
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