% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Jalil:999175,
      author       = {Jalil, Abdur Rehman and Schüffelgen, Peter and Valencia,
                      Helen and Schleenvoigt, Michael and Ringkamp, Christoph and
                      Mussler, Gregor and Luysberg, Martina and Mayer, Joachim and
                      Grützmacher, Detlev},
      title        = {{S}elective {A}rea {E}pitaxy of {Q}uasi-1-{D}imensional
                      {T}opological {N}anostructures and {N}etworks},
      journal      = {Nanomaterials},
      volume       = {13},
      number       = {2},
      issn         = {2079-4991},
      address      = {Basel},
      publisher    = {MDPI},
      reportid     = {FZJ-2023-01209},
      pages        = {354 -},
      year         = {2023},
      abstract     = {Quasi-one-dimensional (1D) topological insulators hold the
                      potential of forming the basis of novel devices in
                      spintronics and quantum computing. While exposure to ambient
                      conditions and conventional fabrication processes are an
                      obstacle to their technological integration, ultra-high
                      vacuum lithography techniques, such as selective area
                      epitaxy (SAE), provide all the necessary ingredients for
                      their refinement into scalable device architectures. In this
                      work, high-quality SAE of quasi-1D topological insulators on
                      templated Si substrates is demonstrated. After identifying
                      the narrow temperature window for selectivity, the
                      flexibility and scalability of this approach is revealed.
                      Compared to planar growth of macroscopic thin films,
                      selectively grown regions are observed to experience
                      enhanced growth rates in the nanostructured templates. Based
                      on these results, a growth model is deduced, which relates
                      device geometry to effective growth rates. After validating
                      the model experimentally for various three-dimensional
                      topological insulators (3D TIs), the crystal quality of
                      selectively grown nanostructures is optimized by tuning the
                      effective growth rates to 5 nm/h. The high quality of
                      selectively grown nanostructures is confirmed through
                      detailed structural characterization via atomically resolved
                      scanning transmission electron microscopy (STEM).},
      cin          = {PGI-9 / PGI-10 / JARA-FIT / ER-C-1 / ER-C-2},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-10-20170113 /
                      $I:(DE-82)080009_20140620$ / I:(DE-Juel1)ER-C-1-20170209 /
                      I:(DE-Juel1)ER-C-2-20170209},
      pnm          = {5222 - Exploratory Qubits (POF4-522) / 5233 - Memristive
                      Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5222 / G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {36678107},
      UT           = {WOS:000927528500001},
      doi          = {10.3390/nano13020354},
      url          = {https://juser.fz-juelich.de/record/999175},
}