| Home > Publications database > PLD-prepared cadmium sensors based on chalcogenide glasses - IFET, LAPS and µISE semiconductor structures |
| Journal Article | PreJuSER-52548 |
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2006
Elsevier Science
Amsterdam [u.a.]
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Please use a persistent id in citations: doi:10.1016/j.snb.2006.04.018
Abstract: In this work, ion-selective field-effect transistors (ISFET), light-addressable potentiometric sensors (LAPS) and miniaturised ion-selective electrodes (RISE) are investigated for the detection of cadmium ions in aqueous solutions for future multi-sensor applications. The sensor membranes are based on a chalcogenide glass material (CdSAgIAS(2)S(3)) that has been deposited as thin film onto different transducer structures by means of the pulsed laser deposition (PLD) technique. The prepared thin films were physically characterised by means of optical microscopy, Rutherford backscattering spectrometry (RBS) and scanning electron microscopy (SEM). The electrochemical characterisation was done by means of ion-selective potentiometry (RISE), current/voltage, constant current (LAPS) and constant-charge mode (ISFET) measurements. (c) 2006 Elsevier B.V. All rights reserved.
Keyword(s): J ; heavy metal detection (auto) ; chalcogenide glasses (auto) ; pulsed laser deposition (auto) ; mu ISE (auto) ; ISFET (auto) ; LAPS (auto)
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