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Thanks to recent breakthroughs in their epitaxy compatible with industrial standard, (Si)GeSnalloys are now emerging as material platform for monolithic integration of next-generationelectronics, optoelectronics, thermoelectrics, and photonics. In order to support the rapidevolution of the (Si)GeSn material system, different advanced characterization methods have tobe developed to investigate its many interesting physical properties. [...]

In this study, the interaction between extended defects and the electrical activity of Ge/Si (001) plastically relaxed epitaxial layers is examined.We used depth-resolved electrochemical capacitance–voltage profiling to measure the background active carrier concentration in a set ofepilayers featuring a threading dislocation density spanning more than four orders of magnitude (from 7 106 to 2.5 1010 cm 2). Thedepth profile of the carrier concentration shows a pronounced peak, which is attributed to the presence of misfit dislocations at the Ge/Siheterointerface; and a nearly constant p-type background extending throughout the Ge layer. [...]

Time-resolved photoluminescence spectroscopy is used to measure the luminescence lifetime of two direct bandgap GeSn samples. The GeSn samples are similar in respect to the material properties, except for one being grown on a thin Ge-post-deposition annealed buffered layer, while the other is grown on a thick Ge virtual substrate. [...]

Since the first proposal of creating Majorana bound states at the interface of a strong topological insulator and a superconductor [1], the interest in researching the properties of three-dimensional topological insulators has grown. Even though there were many different architectures for fault-tolerant Majorana-based quantum bits presented over the years [2-4], the two ingredients stayed the same, being a three dimensional topological insulator nanowire and a conventional s-wave superconductor. [...]

In this work we present a systematic in-depth study of how we can alter the magnetotransport properties of magnetic topological insulator thin films by tuning the parameters of the molecular-beam epitaxy. First, we show how a varying substrate temperature changes the surface morphology and, when chosen properly, leads to a high crystal quality. [...]

Magnetic topological insulators are predicted to be a promising platform for scalable topological quantum computation [1,2]. In the one-dimensional limit the chiral edge modes on opposite sides of a quantum anomalous Hall system hybridize to form a single helical conducting channel. [...]

Magnetic topological insulators are predicted to be a promising platform for scalable topological quantum computation [1,2]. In the one-dimensional limit the chiral edge modes on opposite sides of a quantum anomalous Hall system hybridize to form a single helical conducting channel. [...]