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@ARTICLE{Grtzmacher:1005248,
      author       = {Grützmacher, D. and Concepción Díaz, Omar and Zhao,
                      Q.-T. and Buca, D.},
      title        = {{S}i–{G}e–{S}n alloys grown by chemical vapour
                      deposition: a versatile material for photonics, electronics,
                      and thermoelectrics},
      journal      = {Applied physics / A},
      volume       = {129},
      number       = {3},
      issn         = {0340-3793},
      address      = {New York},
      publisher    = {Springer},
      reportid     = {FZJ-2023-01387},
      pages        = {235},
      year         = {2023},
      abstract     = {Si–Ge–Sn alloys are offering unusual material
                      properties with a strong potential to add a variety of
                      functionalities to advanced CMOS technology. Being a group
                      IV alloy, SiGeSn can be monolithically integrated on Si. The
                      discovery of a direct band gap at Sn concentration above
                      $8\%,$ the extremely small effective mass for electrons and
                      holes as well as the pronounced phonon scattering are
                      opening new opportunities for Si photonics, high frequency
                      devices and thermoelectrics. Si–Ge–Sn alloys with Sn
                      concentration far beyond the solid solubility limit are
                      metastable, artificial materials, which request challenging
                      growth conditions. In this paper the epitaxial conditions
                      for Si–Ge–Sn alloys to achieve precise control of the Sn
                      content, to manage the lattice mismatch and defects, as well
                      as to fabricate doped layers are discussed. The applied
                      process control allows for epitaxy of group-IV
                      heterostructures, required for typical devices for photonic
                      and electronic applications. In this context, lasers and
                      nanowires MOSFETs are discussed in this paper. In additions,
                      the thermal conductivity is investigated as a critical
                      material parameter to obtain a high thermoelectric figure of
                      merit in GeSn alloys.},
      cin          = {PGI-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5234 - Emerging NC Architectures (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5234},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000942780100003},
      doi          = {10.1007/s00339-023-06478-4},
      url          = {https://juser.fz-juelich.de/record/1005248},
}