Journal Article FZJ-2023-01387

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Si–Ge–Sn alloys grown by chemical vapour deposition: a versatile material for photonics, electronics, and thermoelectrics

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2023
Springer New York

Applied physics / A 129(3), 235 () [10.1007/s00339-023-06478-4]

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Abstract: Si–Ge–Sn alloys are offering unusual material properties with a strong potential to add a variety of functionalities to advanced CMOS technology. Being a group IV alloy, SiGeSn can be monolithically integrated on Si. The discovery of a direct band gap at Sn concentration above 8%, the extremely small effective mass for electrons and holes as well as the pronounced phonon scattering are opening new opportunities for Si photonics, high frequency devices and thermoelectrics. Si–Ge–Sn alloys with Sn concentration far beyond the solid solubility limit are metastable, artificial materials, which request challenging growth conditions. In this paper the epitaxial conditions for Si–Ge–Sn alloys to achieve precise control of the Sn content, to manage the lattice mismatch and defects, as well as to fabricate doped layers are discussed. The applied process control allows for epitaxy of group-IV heterostructures, required for typical devices for photonic and electronic applications. In this context, lasers and nanowires MOSFETs are discussed in this paper. In additions, the thermal conductivity is investigated as a critical material parameter to obtain a high thermoelectric figure of merit in GeSn alloys.

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Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
Research Program(s):
  1. 5234 - Emerging NC Architectures (POF4-523) (POF4-523)

Appears in the scientific report 2023
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Medline ; Creative Commons Attribution CC BY 4.0 ; OpenAccess ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Physical, Chemical and Earth Sciences ; DEAL Springer ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection
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 Record created 2023-03-03, last modified 2023-10-27


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