Hauptseite > Publikationsdatenbank > Si–Ge–Sn alloys grown by chemical vapour deposition: a versatile material for photonics, electronics, and thermoelectrics > print

001     1005248
005     20231027114356.0
024 7 _ |a 10.1007/s00339-023-06478-4
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100 1 _ |a Grützmacher, D.
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245 _ _ |a Si–Ge–Sn alloys grown by chemical vapour deposition: a versatile material for photonics, electronics, and thermoelectrics
260 _ _ |a New York
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520 _ _ |a Si–Ge–Sn alloys are offering unusual material properties with a strong potential to add a variety of functionalities to advanced CMOS technology. Being a group IV alloy, SiGeSn can be monolithically integrated on Si. The discovery of a direct band gap at Sn concentration above 8%, the extremely small effective mass for electrons and holes as well as the pronounced phonon scattering are opening new opportunities for Si photonics, high frequency devices and thermoelectrics. Si–Ge–Sn alloys with Sn concentration far beyond the solid solubility limit are metastable, artificial materials, which request challenging growth conditions. In this paper the epitaxial conditions for Si–Ge–Sn alloys to achieve precise control of the Sn content, to manage the lattice mismatch and defects, as well as to fabricate doped layers are discussed. The applied process control allows for epitaxy of group-IV heterostructures, required for typical devices for photonic and electronic applications. In this context, lasers and nanowires MOSFETs are discussed in this paper. In additions, the thermal conductivity is investigated as a critical material parameter to obtain a high thermoelectric figure of merit in GeSn alloys.
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700 1 _ |a Concepción Díaz, Omar
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700 1 _ |a Zhao, Q.-T.
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700 1 _ |a Buca, D.
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773 _ _ |a 10.1007/s00339-023-06478-4
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