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@ARTICLE{Rosenzweig:1005766,
      author       = {Rosenzweig, D. S. and Hansemann, M. N. L. and Schnedler, M.
                      and Ebert, Ph. and Eisele, H.},
      title        = {{A}tomically resolved study of initial stages of hydrogen
                      etching and adsorption on {G}a{A}s(110)},
      journal      = {Physical review materials},
      volume       = {6},
      number       = {12},
      issn         = {2475-9953},
      address      = {College Park, MD},
      publisher    = {APS},
      reportid     = {FZJ-2023-01619},
      pages        = {124603},
      year         = {2022},
      abstract     = {The initial stages of hydrogen adsorption on GaAs(110)
                      surfaces at room temperature are investigated by atomically
                      resolved scanning tunneling microscopy and spectroscopy. Two
                      effects are found to occur simultaneously: On the one hand a
                      surface phase separation occurs, creating 1×1 reconstructed
                      fully hydrogen-covered areas while leaving the surface in
                      between completely hydrogen free. In the fully
                      hydrogen-covered areas, hydrogen bonds equally to As- and
                      Ga-derived dangling bonds, unbuckling and passivating the
                      surface. On the other hand, hydrogen-induced point defects
                      are formed with increasing density. The dominating defects
                      consist of As vacancy–hydrogen defect complexes, formed by
                      preferential hydrogen etching of As. Using a defect-molecule
                      model the Ga-H bridge bonds and double-occupied Ga dangling
                      bonds are suggested to be at the origin of the observed
                      surface Fermi level pinning 0.25 to 0.3 eV above the valence
                      band edge, identical within error margins for p- and n-doped
                      GaAs(110).},
      cin          = {ER-C-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {5351 - Platform for Correlative, In Situ and Operando
                      Characterization (POF4-535)},
      pid          = {G:(DE-HGF)POF4-5351},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000914422000003},
      doi          = {10.1103/PhysRevMaterials.6.124603},
      url          = {https://juser.fz-juelich.de/record/1005766},
}