Journal Article

FZJ-2023-01619

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Atomically resolved study of initial stages of hydrogen etching and adsorption on GaAs(110)

Rosenzweig, D. S. (Corresponding author) ; Hansemann, M. N. L. (Corresponding author)Extern* ; Schnedler, M.FZJ* ; Ebert, P.FZJ* ; Eisele, H.Extern*

2022
APS College Park, MD

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Please use a persistent id in citations: http://hdl.handle.net/2128/34234  doi:10.1103/PhysRevMaterials.6.124603

Abstract: The initial stages of hydrogen adsorption on GaAs(110) surfaces at room temperature are investigated by atomically resolved scanning tunneling microscopy and spectroscopy. Two effects are found to occur simultaneously: On the one hand a surface phase separation occurs, creating 1×1 reconstructed fully hydrogen-covered areas while leaving the surface in between completely hydrogen free. In the fully hydrogen-covered areas, hydrogen bonds equally to As- and Ga-derived dangling bonds, unbuckling and passivating the surface. On the other hand, hydrogen-induced point defects are formed with increasing density. The dominating defects consist of As vacancy–hydrogen defect complexes, formed by preferential hydrogen etching of As. Using a defect-molecule model the Ga-H bridge bonds and double-occupied Ga dangling bonds are suggested to be at the origin of the observed surface Fermi level pinning 0.25 to 0.3 eV above the valence band edge, identical within error margins for p- and n-doped GaAs(110).

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Contributing Institute(s):

1. Physik Nanoskaliger Systeme (ER-C-1)

Research Program(s):

1. 5351 - Platform for Correlative, In Situ and Operando Characterization (POF4-535) (POF4-535)

Appears in the scientific report 2023

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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