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@ARTICLE{Fischer:1006435,
      author       = {Fischer, Benedikt and Beyer, Wolfhard and Lambertz, Andreas
                      and Nuys, Maurice and Duan, Weiyuan and Ding, Kaining and
                      Rau, Uwe},
      title        = {{T}he {M}icrostructure of {U}nderdense {H}ydrogenated
                      {A}morphous {S}ilicon and its {A}pplication to {S}ilicon
                      {H}eterojunction {S}olar {C}ells},
      journal      = {Solar RRL},
      volume       = {7},
      number       = {10},
      issn         = {2367-198X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2023-01670},
      pages        = {2300103 -},
      year         = {2023},
      abstract     = {The application of thin underdense hydrogenated amorphous
                      silicon (a-Si:H) films for passivation of crystalline Si
                      (c-Si) by avoiding epitaxy in silicon heterojunction (SHJ)
                      solar cell technology has recently been proposed and
                      successfully applied. Herein, the microstructure of such
                      underdense a-Si:H films, as used in our silicon
                      heterojunction solar cell baseline, is investigated mainly
                      by Raman spectroscopy, effusion, and secondary ion mass
                      spectrometry. In H effusion experiments, a low-temperature
                      (near 400 °C) effusion peak which has been attributed to
                      the diffusion of molecular H2 through a void network is
                      seen. The dependence of the H effusion peaks on film
                      thickness is similar as observed previously for void rich,
                      low substrate-temperature a-Si:H material. Solar cells using
                      underdense a-Si:H as i1-layer with a maximum efficiency of
                      $24.1\%$ are produced. The passivation quality of the solar
                      cells saturates with increasing i1-layer thickness. The fact
                      that with such underdense material combined with a following
                      high-quality i2-layer, instead of only high-quality a-Si:H
                      with a low defect density direct on the c-Si substrate, good
                      passivation of c-Si solar cells is achieved, which
                      demonstrates that in the passivation process, molecular
                      hydrogen plays an important role.},
      cin          = {IEK-5},
      ddc          = {600},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1212 - Materials and Interfaces (POF4-121) / 1213 - Cell
                      Design and Development (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1212 / G:(DE-HGF)POF4-1213},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000949562600001},
      doi          = {10.1002/solr.202300103},
      url          = {https://juser.fz-juelich.de/record/1006435},
}