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@ARTICLE{Gebrewold:1006574,
      author       = {Gebrewold, Habtamu Tsegaye and Bittkau, Karsten and Qiu,
                      Kaifu and Rau, Uwe and Ding, Kaining},
      title        = {{U}nderstanding {S}ilicon {H}eterojunction {S}olar {C}ells
                      with nc‐{S}i{C}/{S}i{O} 2 as an {A}lternate {T}ransparent
                      {P}assivating {F}ront {C}ontact and {C}omputational {D}esign
                      {O}ptimization},
      journal      = {Solar RRL},
      volume       = {7},
      number       = {7},
      issn         = {2367-198X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2023-01722},
      pages        = {2201051},
      year         = {2023},
      abstract     = {The potential performance of silicon heterojunction solar
                      cells applying transparent passivating contact (TPC) at the
                      front side, based on a nc-SiC:H/SiO2 layer stack, is modeled
                      and investigated. Herein, a complete multiscale
                      electro-optical device model of TPC solar cells is
                      developed. The model is then used to understand and analyze
                      such cells and search for potential conversion efficiency
                      improvement paths. The influences of contact layer
                      thicknesses and other properties on device performance are
                      studied. An algorithm-based optimization of cell
                      electro-optical performance is performed. It is implemented
                      by coupling a genetic algorithm with a finite element
                      method-based TPC solar cell device model. Optimum front
                      contact layer thicknesses are calculated. For optically
                      optimized TPC contact layer thicknesses, an optical
                      improvement of around 0.5 mA cm² is found. Moreover, for
                      complete electro-optical optimization of TPC layers, about
                      $0.27\%$ absolute value increment in power conversion
                      efficiency is calculated. At the rear side, proper designing
                      of optimizing carrier transport using active dopant
                      concentration of p-type a-Si:H layer and indium tin oxide
                      layer has shown a potential to reach power conversion
                      efficiency beyond $25\%.$},
      cin          = {IEK-5},
      ddc          = {600},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1213 - Cell Design and Development (POF4-121) /
                      Verbundvorhaben: TuKaN - Tunnelkontakte auf N-Typ: für die
                      Metallisierung mit Siebdruck, Teilvorhaben: Herstellung von
                      Solarzellen mit passivierendem Tunnelkontakt und
                      funktionalen Schichten aus katalytischer und
                      plasmaunterstützter chemischer Gasphasenab (0324198D)},
      pid          = {G:(DE-HGF)POF4-1213 / G:(BMWi)0324198D},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000921397400001},
      doi          = {10.1002/solr.202201051},
      url          = {https://juser.fz-juelich.de/record/1006574},
}