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@ARTICLE{Lee:1006788,
      author       = {Lee, Ying-Chieh and Yen, Voon Choong and Pithan, Christian
                      and Jan, Jhen-Hau},
      title        = {{S}tudy of {N}i–{C}r / {C}r{N} bilayer thin films
                      resistor prepared by magnetron sputtering},
      journal      = {Vacuum},
      volume       = {213},
      issn         = {0042-207X},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier Science},
      reportid     = {FZJ-2023-01841},
      pages        = {112085 -},
      year         = {2023},
      abstract     = {In this study, we prepare bilayer Ni–Cr/CrN films. A
                      Ni–Cr resistive thin film was prepared by DC sputtering
                      from targets of Ni0.8-Cr0.2 casting alloy. A CrN protection
                      thin film was prepared based on optimum sputtering
                      conditions of the Ni–Cr film, which was made by DC and RF
                      magnetron co-sputtering from targets of Ni0.8-Cr0.2 casting
                      alloy and chromium. The electrical properties and
                      microstructures of the resistive films at different
                      annealing temperatures were investigated. The phase
                      evolution, microstructural and composition of Ni–Cr and
                      NiCr/CrN films were characterized by X-ray diffraction
                      (XRD), field-emission transmission electron microscopy
                      (HRTEM) and auger electron spectroscopy (AES). The results
                      indicated that the resistivity of the bilayer Ni–Cr/CrN
                      films is higher than Ni–Cr films. When the annealing
                      temperature was set to 300 °C, the bilayer Ni–Cr/CrN
                      films exhibited a resistivity ∼303 μΩ cm with the
                      smallest temperature coefficient of resistance (TCR) of −3
                      ppm/°C. However, the Ni–Cr films that annealed at 300 °C
                      showed a resistivity of ∼210 μΩ cm, with a TCR of 13
                      ppm/°C. In addition, the TCR and resistivity variation rate
                      of CrN protective coating layer on the Ni–Cr films after
                      high temperature testing at 150 °C up to 100 h was done.
                      The results show that the average change rate of the TCR for
                      bilayer Ni–Cr/CrN films is lower than single Ni–Cr
                      films.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000983551100001},
      doi          = {10.1016/j.vacuum.2023.112085},
      url          = {https://juser.fz-juelich.de/record/1006788},
}