001     1006788
005     20240116084315.0
024 7 _ |a 10.1016/j.vacuum.2023.112085
|2 doi
024 7 _ |a 0042-207X
|2 ISSN
024 7 _ |a 1879-2715
|2 ISSN
024 7 _ |a 10.34734/FZJ-2023-01841
|2 datacite_doi
024 7 _ |a WOS:000983551100001
|2 WOS
037 _ _ |a FZJ-2023-01841
082 _ _ |a 530
100 1 _ |a Lee, Ying-Chieh
|0 0000-0002-5414-5497
|b 0
|e Corresponding author
245 _ _ |a Study of Ni–Cr / CrN bilayer thin films resistor prepared by magnetron sputtering
260 _ _ |a Amsterdam [u.a.]
|c 2023
|b Elsevier Science
336 7 _ |a article
|2 DRIVER
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|b journal
|m journal
|0 PUB:(DE-HGF)16
|s 1702463527_27254
|2 PUB:(DE-HGF)
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a Journal Article
|0 0
|2 EndNote
520 _ _ |a In this study, we prepare bilayer Ni–Cr/CrN films. A Ni–Cr resistive thin film was prepared by DC sputtering from targets of Ni0.8-Cr0.2 casting alloy. A CrN protection thin film was prepared based on optimum sputtering conditions of the Ni–Cr film, which was made by DC and RF magnetron co-sputtering from targets of Ni0.8-Cr0.2 casting alloy and chromium. The electrical properties and microstructures of the resistive films at different annealing temperatures were investigated. The phase evolution, microstructural and composition of Ni–Cr and NiCr/CrN films were characterized by X-ray diffraction (XRD), field-emission transmission electron microscopy (HRTEM) and auger electron spectroscopy (AES). The results indicated that the resistivity of the bilayer Ni–Cr/CrN films is higher than Ni–Cr films. When the annealing temperature was set to 300 °C, the bilayer Ni–Cr/CrN films exhibited a resistivity ∼303 μΩ cm with the smallest temperature coefficient of resistance (TCR) of −3 ppm/°C. However, the Ni–Cr films that annealed at 300 °C showed a resistivity of ∼210 μΩ cm, with a TCR of 13 ppm/°C. In addition, the TCR and resistivity variation rate of CrN protective coating layer on the Ni–Cr films after high temperature testing at 150 °C up to 100 h was done. The results show that the average change rate of the TCR for bilayer Ni–Cr/CrN films is lower than single Ni–Cr films.
536 _ _ |a 5233 - Memristive Materials and Devices (POF4-523)
|0 G:(DE-HGF)POF4-5233
|c POF4-523
|f POF IV
|x 0
588 _ _ |a Dataset connected to CrossRef, Journals: juser.fz-juelich.de
700 1 _ |a Yen, Voon Choong
|0 P:(DE-HGF)0
|b 1
700 1 _ |a Pithan, Christian
|0 P:(DE-Juel1)130894
|b 2
|u fzj
700 1 _ |a Jan, Jhen-Hau
|0 0000-0002-5164-3175
|b 3
773 _ _ |a 10.1016/j.vacuum.2023.112085
|g Vol. 213, p. 112085 -
|0 PERI:(DE-600)1479044-0
|p 112085 -
|t Vacuum
|v 213
|y 2023
|x 0042-207X
856 4 _ |y OpenAccess
|u https://juser.fz-juelich.de/record/1006788/files/NiCr-CrN%20thin%20film%20Figure20230129.doc
856 4 _ |y OpenAccess
|u https://juser.fz-juelich.de/record/1006788/files/NiCr-CrN%20thin%20film%20manuscript20230207.doc
856 4 _ |y Restricted
|u https://juser.fz-juelich.de/record/1006788/files/Pithan-23-02.pdf
909 C O |o oai:juser.fz-juelich.de:1006788
|p openaire
|p open_access
|p VDB
|p driver
|p dnbdelivery
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 2
|6 P:(DE-Juel1)130894
913 1 _ |a DE-HGF
|b Key Technologies
|l Natural, Artificial and Cognitive Information Processing
|1 G:(DE-HGF)POF4-520
|0 G:(DE-HGF)POF4-523
|3 G:(DE-HGF)POF4
|2 G:(DE-HGF)POF4-500
|4 G:(DE-HGF)POF
|v Neuromorphic Computing and Network Dynamics
|9 G:(DE-HGF)POF4-5233
|x 0
914 1 _ |y 2023
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0160
|2 StatID
|b Essential Science Indicators
|d 2023-03-30
915 _ _ |a WoS
|0 StatID:(DE-HGF)0113
|2 StatID
|b Science Citation Index Expanded
|d 2023-03-30
915 _ _ |a OpenAccess
|0 StatID:(DE-HGF)0510
|2 StatID
915 _ _ |a Nationallizenz
|0 StatID:(DE-HGF)0420
|2 StatID
|d 2023-08-19
|w ger
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0300
|2 StatID
|b Medline
|d 2023-08-19
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0199
|2 StatID
|b Clarivate Analytics Master Journal List
|d 2023-08-19
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0150
|2 StatID
|b Web of Science Core Collection
|d 2023-08-19
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)1160
|2 StatID
|b Current Contents - Engineering, Computing and Technology
|d 2023-08-19
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)1150
|2 StatID
|b Current Contents - Physical, Chemical and Earth Sciences
|d 2023-08-19
915 _ _ |a JCR
|0 StatID:(DE-HGF)0100
|2 StatID
|b VACUUM : 2022
|d 2023-08-19
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0200
|2 StatID
|b SCOPUS
|d 2023-08-19
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0600
|2 StatID
|b Ebsco Academic Search
|d 2023-08-19
915 _ _ |a Peer Review
|0 StatID:(DE-HGF)0030
|2 StatID
|b ASC
|d 2023-08-19
915 _ _ |a IF < 5
|0 StatID:(DE-HGF)9900
|2 StatID
|d 2023-08-19
920 1 _ |0 I:(DE-Juel1)PGI-7-20110106
|k PGI-7
|l Elektronische Materialien
|x 0
920 1 _ |0 I:(DE-82)080009_20140620
|k JARA-FIT
|l JARA-FIT
|x 1
980 _ _ |a journal
980 _ _ |a VDB
980 _ _ |a UNRESTRICTED
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a I:(DE-82)080009_20140620
980 1 _ |a FullTexts


LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21