Home > Publications database > Universal conductance fluctuations in a Bi 1.5 Sb 0.5 Te 1.8 Se 1.2 topological insulator nano-scaled Hall bar structure > print

001     1006967
005     20231027114402.0
024 7 _ |a 10.1088/1361-6641/acb45f
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024 7 _ |a 0268-1242
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037 _ _ |a FZJ-2023-01918
082 _ _ |a 620
100 1 _ |a Zimmermann, Erik
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245 _ _ |a Universal conductance fluctuations in a Bi 1.5 Sb 0.5 Te 1.8 Se 1.2 topological insulator nano-scaled Hall bar structure
260 _ _ |a Bristol
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520 _ _ |a We present low-temperature magnetotransport measurements characterizing the promising quaternary Bi1.5Sb0.5Te1.8Se1.2 topological insulator material. The measurements performed on a nano-Hall bar grown by selective-area molecular beam epitaxy revealed pronounced universal conductance fluctuations. It is shown that these fluctuations originate from phase-coherent loops within the topologically protected surface states. Furthermore, the decay of the fluctuation amplitude with increasing temperatures suggests a quasi one-dimensional transport regime.
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700 1 _ |a Kölzer, Jonas
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700 1 _ |a Schleenvoigt, Michael
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700 1 _ |a Rosenbach, Daniel
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700 1 _ |a Mussler, Gregor
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700 1 _ |a Schüffelgen, Peter
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700 1 _ |a Heider, Tristan
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700 1 _ |a Plucinski, Lukasz
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700 1 _ |a Schubert, Jürgen
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700 1 _ |a Lüth, Hans
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700 1 _ |a Grützmacher, Detlev
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700 1 _ |a Schäpers, Thomas
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773 _ _ |a 10.1088/1361-6641/acb45f
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856 4 _ |u https://juser.fz-juelich.de/record/1006967/files/Zimmermann_2023_Semicond._Sci._Technol._38_035010.pdf
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