Journal Article

FZJ-2023-01918

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Universal conductance fluctuations in a Bi 1.5 Sb 0.5 Te 1.8 Se 1.2 topological insulator nano-scaled Hall bar structure

Zimmermann, E. (Corresponding author)FZJ* ; Kölzer, J.FZJ* ; Schleenvoigt, M.FZJ* ; Rosenbach, D.FZJ* ; Mussler, G.FZJ* ; Schüffelgen, P.FZJ* ; Heider, T.FZJ* ; Plucinski, L.FZJ* ; Schubert, J.FZJ* ; Lüth, H.FZJ* ; Grützmacher, D.FZJ* ; Schäpers, T.FZJ*

2023
IOP Publ. Bristol

This record in other databases:  

Please use a persistent id in citations: http://hdl.handle.net/2128/34354  doi:10.1088/1361-6641/acb45f

Abstract: We present low-temperature magnetotransport measurements characterizing the promising quaternary Bi1.5Sb0.5Te1.8Se1.2 topological insulator material. The measurements performed on a nano-Hall bar grown by selective-area molecular beam epitaxy revealed pronounced universal conductance fluctuations. It is shown that these fluctuations originate from phase-coherent loops within the topologically protected surface states. Furthermore, the decay of the fluctuation amplitude with increasing temperatures suggests a quasi one-dimensional transport regime.

---

Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)
3. Elektronische Eigenschaften (PGI-6)

Research Program(s):

1. 5222 - Exploratory Qubits (POF4-522) (POF4-522)

Appears in the scientific report 2023

---

Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; National-Konsortium ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

---