TY  - JOUR
AU  - Wellmann, Peter J.
AU  - Steiner, Johannes
AU  - Strüber, Sven
AU  - Arzig, Matthias
AU  - Salamon, Michael
AU  - Uhlmann, Norman
AU  - Nguyen, Binh Duong
AU  - Sandfeld, Stefan
TI  - The processing chain of the wide bandgap semiconductor SiC – How small steps enabled a mature technology
JO  - Diamond and related materials
VL  - 136
SN  - 0925-9635
CY  - Amsterdam [u.a.]
PB  - Elsevier Science
M1  - FZJ-2023-02236
SP  - 109895 -
PY  - 2023
AB  - This work paper was presented as a keynote lecture at the international conference on diamond and related materials in Lisbon (Portugal) in the year 2022. This paper summarizes in the first part the processing chain of the semiconductor material SiC from the raw material to epitaxially-ready wafers as they are used for electronic device manufacturing. In the second part a current research study, the reduction of the basal plane dislocation density in SiC crystal growth is presented. Among other defects, basal plane dislocations belong to the more severe structural defects in SiC with respect to degradation during electronic device operation. In the third part the applicability of X-ray topography to reveal dislocations and other structural defects in SiC is outlined in a review style.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000976520900001
DO  - DOI:10.1016/j.diamond.2023.109895
UR  - https://juser.fz-juelich.de/record/1008190
ER  -