Journal Article

FZJ-2023-02236

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png The processing chain of the wide bandgap semiconductor SiC – How small steps enabled a mature technology

Wellmann, P. J. (Corresponding author) ; Steiner, J. ; Strüber, S. ; Arzig, M. ; Salamon, M. ; Uhlmann, N. ; Nguyen, B. D.FZJ* ; Sandfeld, S.FZJ*

2023
Elsevier Science Amsterdam [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.diamond.2023.109895  doi:10.34734/FZJ-2023-02236

Abstract: This work paper was presented as a keynote lecture at the international conference on diamond and related materials in Lisbon (Portugal) in the year 2022. This paper summarizes in the first part the processing chain of the semiconductor material SiC from the raw material to epitaxially-ready wafers as they are used for electronic device manufacturing. In the second part a current research study, the reduction of the basal plane dislocation density in SiC crystal growth is presented. Among other defects, basal plane dislocations belong to the more severe structural defects in SiC with respect to degradation during electronic device operation. In the third part the applicability of X-ray topography to reveal dislocations and other structural defects in SiC is outlined in a review style.

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Contributing Institute(s):

1. Materials Data Science and Informatics (IAS-9)

Research Program(s):

1. 5111 - Domain-Specific Simulation & Data Life Cycle Labs (SDLs) and Research Groups (POF4-511) (POF4-511)

Appears in the scientific report 2023

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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