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001008196 1001_ $$00000-0002-6686-7964$$aSteiner, Johannes$$b0
001008196 245__ $$aPrevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth
001008196 260__ $$aBaech$$bTrans Tech Publications Ltd.$$c2023
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001008196 520__ $$aTo prevent arrays of basal plane dislocations (BPD) forming during grown 4H-SiC single crystals, the growth cell in physical vapor transport (PVT) growth was modified by adapting the temperature gradients, the seed attachment method and the seeding phase. The resulting reduction in stress was modeled numerically and the crystals were investigated by X-ray topography (XRT) and molten potassium hydroxide (KOH) etching. Due to these modifications, the formation of BPD arrays was completely suppressed.
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001008196 7001_ $$0P:(DE-Juel1)187067$$aNguyen, Binh Duong$$b1$$ufzj
001008196 7001_ $$0P:(DE-Juel1)186075$$aSandfeld, Stefan$$b2$$ufzj
001008196 7001_ $$00000-0002-2180-1507$$aWellmann, Peter J.$$b3$$eCorresponding author
001008196 773__ $$0PERI:(DE-600)2051138-3$$a10.4028/p-eu98j0$$gVol. 343, p. 9 - 14$$p9 - 14$$tSolid state phenomena$$v343$$x1012-0394$$y2023
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001008196 9141_ $$y2023
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