Journal Article

FZJ-2023-02242

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth

Steiner, J. ; Nguyen, B. D.FZJ* ; Sandfeld, S.FZJ* ; Wellmann, P. J. (Corresponding author)

2023
Trans Tech Publications Ltd. Baech

This record in other databases:

Please use a persistent id in citations: http://hdl.handle.net/2128/34497  doi:10.4028/p-eu98j0

Abstract: To prevent arrays of basal plane dislocations (BPD) forming during grown 4H-SiC single crystals, the growth cell in physical vapor transport (PVT) growth was modified by adapting the temperature gradients, the seed attachment method and the seeding phase. The resulting reduction in stress was modeled numerically and the crystals were investigated by X-ray topography (XRT) and molten potassium hydroxide (KOH) etching. Due to these modifications, the formation of BPD arrays was completely suppressed.

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Contributing Institute(s):

1. Materials Data Science and Informatics (IAS-9)

Research Program(s):

1. 5111 - Domain-Specific Simulation & Data Life Cycle Labs (SDLs) and Research Groups (POF4-511) (POF4-511)

Appears in the scientific report 2023

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Database coverage:
; ; Allianz-Lizenz / DFG ; SCOPUS

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