TY  - JOUR
AU  - Steiner, Johannes
AU  - Nguyen, Binh Duong
AU  - Sandfeld, Stefan
AU  - Wellmann, Peter J.
TI  - Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth
JO  - Solid state phenomena
VL  - 343
SN  - 1012-0394
CY  - Baech
PB  - Trans Tech Publications Ltd.
M1  - FZJ-2023-02242
SP  - 9 - 14
PY  - 2023
AB  - To prevent arrays of basal plane dislocations (BPD) forming during grown 4H-SiC single crystals, the growth cell in physical vapor transport (PVT) growth was modified by adapting the temperature gradients, the seed attachment method and the seeding phase. The resulting reduction in stress was modeled numerically and the crystals were investigated by X-ray topography (XRT) and molten potassium hydroxide (KOH) etching. Due to these modifications, the formation of BPD arrays was completely suppressed.
LB  - PUB:(DE-HGF)16
DO  - DOI:10.4028/p-eu98j0
UR  - https://juser.fz-juelich.de/record/1008196
ER  -