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@ARTICLE{Steiner:1008196,
      author       = {Steiner, Johannes and Nguyen, Binh Duong and Sandfeld,
                      Stefan and Wellmann, Peter J.},
      title        = {{P}revention of {B}unched {B}asal {P}lane {D}islocation
                      {A}rrays in 4{H}-{S}i{C} {PVT}-{G}rowth},
      journal      = {Solid state phenomena},
      volume       = {343},
      issn         = {1012-0394},
      address      = {Baech},
      publisher    = {Trans Tech Publications Ltd.},
      reportid     = {FZJ-2023-02242},
      pages        = {9 - 14},
      year         = {2023},
      abstract     = {To prevent arrays of basal plane dislocations (BPD) forming
                      during grown 4H-SiC single crystals, the growth cell in
                      physical vapor transport (PVT) growth was modified by
                      adapting the temperature gradients, the seed attachment
                      method and the seeding phase. The resulting reduction in
                      stress was modeled numerically and the crystals were
                      investigated by X-ray topography (XRT) and molten potassium
                      hydroxide (KOH) etching. Due to these modifications, the
                      formation of BPD arrays was completely suppressed.},
      cin          = {IAS-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IAS-9-20201008},
      pnm          = {5111 - Domain-Specific Simulation $\&$ Data Life Cycle Labs
                      (SDLs) and Research Groups (POF4-511)},
      pid          = {G:(DE-HGF)POF4-5111},
      typ          = {PUB:(DE-HGF)16},
      doi          = {10.4028/p-eu98j0},
      url          = {https://juser.fz-juelich.de/record/1008196},
}