Home > Publications database > Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth > print |
001 | 1008196 | ||
005 | 20230929112533.0 | ||
024 | 7 | _ | |a 10.4028/p-eu98j0 |2 doi |
024 | 7 | _ | |a 1012-0394 |2 ISSN |
024 | 7 | _ | |a 0377-6883 |2 ISSN |
024 | 7 | _ | |a 1662-9779 |2 ISSN |
024 | 7 | _ | |a 1662-9787 |2 ISSN |
024 | 7 | _ | |a 2128/34497 |2 Handle |
037 | _ | _ | |a FZJ-2023-02242 |
082 | _ | _ | |a 530 |
100 | 1 | _ | |a Steiner, Johannes |0 0000-0002-6686-7964 |b 0 |
245 | _ | _ | |a Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth |
260 | _ | _ | |a Baech |c 2023 |b Trans Tech Publications Ltd. |
336 | 7 | _ | |a article |2 DRIVER |
336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1685962734_6428 |2 PUB:(DE-HGF) |
336 | 7 | _ | |a ARTICLE |2 BibTeX |
336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
520 | _ | _ | |a To prevent arrays of basal plane dislocations (BPD) forming during grown 4H-SiC single crystals, the growth cell in physical vapor transport (PVT) growth was modified by adapting the temperature gradients, the seed attachment method and the seeding phase. The resulting reduction in stress was modeled numerically and the crystals were investigated by X-ray topography (XRT) and molten potassium hydroxide (KOH) etching. Due to these modifications, the formation of BPD arrays was completely suppressed. |
536 | _ | _ | |a 5111 - Domain-Specific Simulation & Data Life Cycle Labs (SDLs) and Research Groups (POF4-511) |0 G:(DE-HGF)POF4-5111 |c POF4-511 |f POF IV |x 0 |
588 | _ | _ | |a Dataset connected to CrossRef, Journals: juser.fz-juelich.de |
700 | 1 | _ | |a Nguyen, Binh Duong |0 P:(DE-Juel1)187067 |b 1 |u fzj |
700 | 1 | _ | |a Sandfeld, Stefan |0 P:(DE-Juel1)186075 |b 2 |u fzj |
700 | 1 | _ | |a Wellmann, Peter J. |0 0000-0002-2180-1507 |b 3 |e Corresponding author |
773 | _ | _ | |a 10.4028/p-eu98j0 |g Vol. 343, p. 9 - 14 |0 PERI:(DE-600)2051138-3 |p 9 - 14 |t Solid state phenomena |v 343 |y 2023 |x 1012-0394 |
856 | 4 | _ | |u https://juser.fz-juelich.de/record/1008196/files/SSP.343.9.pdf |y OpenAccess |
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914 | 1 | _ | |y 2023 |
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