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@ARTICLE{Liu:1008543,
      author       = {Liu, Mingshan and Junk, Yannik and Han, Yi and Yang, Dong
                      and Bae, Jin Hee and Frauenrath, Marvin and Hartmann,
                      Jean-Michel and Ikonic, Zoran and Bärwolf, Florian and Mai,
                      Andreas and Grützmacher, Detlev and Knoch, Joachim and
                      Buca, Dan and Zhao, Qing-Tai},
      title        = {{V}ertical {G}e{S}n nanowire {MOSFET}s for {CMOS} beyond
                      silicon},
      journal      = {Communications engineering},
      volume       = {2},
      number       = {1},
      issn         = {2731-3395},
      address      = {[London]},
      publisher    = {Nature Publishing Group UK},
      reportid     = {FZJ-2023-02380},
      pages        = {7},
      year         = {2023},
      abstract     = {The continued downscaling of silicon CMOS technology
                      presents challenges for achieving the required low power
                      consumption. While high mobility channel materials hold
                      promise for improved device performance at low power levels,
                      a material system which enables both high mobility n-FETs
                      and p-FETs, that is compatible with Si technology and can be
                      readily integrated into existing fabrication lines is
                      required. Here, we present high performance, vertical
                      nanowire gate-all-around FETs based on the GeSn-material
                      system grown on Si. While the p-FET transconductance is
                      increased to 850 µS/µm by exploiting the small band gap
                      of GeSn as source yielding high injection velocities, the
                      mobility in n-FETs is increased 2.5-fold compared to a Ge
                      reference device, by using GeSn as channel material. The
                      potential of the material system for a future beyond Si CMOS
                      logic and quantum computing applications is demonstrated via
                      a GeSn inverter and steep switching at cryogenic
                      temperatures, respectively.},
      cin          = {PGI-9 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {5234 - Emerging NC Architectures (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5234},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001478243600001},
      doi          = {10.1038/s44172-023-00059-2},
      url          = {https://juser.fz-juelich.de/record/1008543},
}