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@ARTICLE{Buttberg:1008690,
      author       = {Buttberg, Milan and Valov, Ilia and Menzel, Stephan},
      title        = {{S}imulating the filament morphology in electrochemical
                      metallization cells},
      journal      = {Neuromorphic computing and engineering},
      volume       = {3},
      number       = {2},
      issn         = {2634-4386},
      address      = {Bristol},
      publisher    = {IOP Publishing Ltd.},
      reportid     = {FZJ-2023-02481},
      pages        = {024010 -},
      year         = {2023},
      abstract     = {Electrochemical metallization (ECM) cells are based on the
                      principle of voltage controlled formation or dissolution of
                      a nanometer-thin metallic conductive filament (CF) between
                      two electrodes separated by an insulating material, e.g. an
                      oxide. The lifetime of the CF depends on factors such as
                      materials and biasing. Depending on the lifetime of the
                      CF—from microseconds to years—ECM cells show promising
                      properties for use in neuromorphic circuits, for in-memory
                      computing, or as selectors and memory cells in storage
                      applications. For enabling those technologies with ECM
                      cells, the lifetime of the CF has to be controlled. As
                      various authors connect the lifetime with the morphology of
                      the CF, the key parameters for CF formation have to be
                      identified. In this work, we present a 2D axisymmetric
                      physical continuum model that describes the kinetics of
                      volatile and non-volatile ECM cells, as well as the
                      morphology of the CF. It is shown that the morphology
                      depends on both the amplitude of the applied voltage signal
                      and CF-growth induced mechanical stress within the oxide
                      layer. The model is validated with previously published
                      kinetic measurements of non-volatile Ag/SiO2/Pt and volatile
                      Ag/HfO2/Pt cells and the simulated CF morphologies are
                      consistent with previous experimental CF observations.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {621.3},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523) / BMBF
                      16ME0399 - Verbundprojekt: Neuro-inspirierte Technologien
                      der künstlichen Intelligenz für die Elektronik der Zukunft
                      - NEUROTEC II - (BMBF-16ME0399) / BMBF 16ME0398K -
                      Verbundprojekt: Neuro-inspirierte Technologien der
                      künstlichen Intelligenz für die Elektronik der Zukunft -
                      NEUROTEC II - (BMBF-16ME0398K)},
      pid          = {G:(DE-HGF)POF4-5233 / G:(DE-82)BMBF-16ME0399 /
                      G:(DE-82)BMBF-16ME0398K},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001064060100001},
      doi          = {10.1088/2634-4386/acdbe5},
      url          = {https://juser.fz-juelich.de/record/1008690},
}