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@ARTICLE{Fischer:1017132,
      author       = {Fischer, Benedikt and Lambertz, Andreas and Nuys, Maurice
                      and Beyer, Wolfhard and Duan, Weiyuan and Bittkau, Karsten
                      and Ding, Kaining and Rau, Uwe},
      title        = {{I}nsights into the {S}i─{H} {B}onding {C}onfiguration at
                      the {A}morphous/{C}rystalline {S}ilicon {I}nterface of
                      {S}ilicon {H}eterojunction {S}olar {C}ells by {R}aman and
                      {FTIR} {S}pectroscopy},
      journal      = {Advanced materials},
      volume       = {35},
      number       = {47},
      issn         = {0935-9648},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2023-03953},
      pages        = {2306351},
      year         = {2023},
      abstract     = {In silicon heterojunction solar cell technology, thin
                      layers of hydrogenated amorphous silicon (a-Si:H) are
                      applied as passivating contacts to the crystalline silicon
                      (c-Si) wafer. Thus, the properties of the a-Si:H is crucial
                      for the performance of the solar cells. One important
                      property of a-Si:H is its microstructure which can be
                      characterized by the microstructure parameter R based on
                      Si─H bond stretching vibrations. A common method to
                      determine R is Fourier transform infrared (FTIR) absorption
                      measurement which, however, is difficult to perform on solar
                      cells for various reasons like the use of textured Si wafers
                      and the presence of conducting oxide contact layers. Here,
                      it is demonstrated that Raman spectroscopy is suitable to
                      determine the microstructure of bulk a-Si:H layers of 10 nm
                      or less on textured c-Si underneath indium tin oxide as
                      conducting oxide. A detailed comparison of FTIR and Raman
                      spectra is performed and significant differences in the
                      microstructure parameter are obtained by both methods with
                      decreasing a-Si:H film thickness.},
      cin          = {IEK-5},
      ddc          = {660},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1212 - Materials and Interfaces (POF4-121)},
      pid          = {G:(DE-HGF)POF4-1212},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {37708374},
      UT           = {WOS:001083113400001},
      doi          = {10.1002/adma.202306351},
      url          = {https://juser.fz-juelich.de/record/1017132},
}