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| Hauptseite > Publikationsdatenbank > Preparation of 1 μm dense BaZr0.8Y0.2O3-δ electrolyte via water-based wet powder spraying for proton conducting cells |
| Hauptseite > Publikationsdatenbank > Preparation of 1 μm dense BaZr0.8Y0.2O3-δ electrolyte via water-based wet powder spraying for proton conducting cells |
| Poster (After Call) | FZJ-2023-04563 |
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2023
Abstract: Proton conducting ceramic materials are highly promising for intermediate-temperature electrochemical devices such as fuel cells and electrolysis cells due to their protonic conductivity in the temperature range of 400-600 °C[1]. The inherent refractory properties of the state-of-the art proton conductor Y-substituted Ba(Zr, Ce)O3 (BZCY) poses a major challenge in its sintering process, especially when the goal is to prepare physically thin (< 5 μm) and gas-tight electrolyte layers. Typically this issue is approached by adding sintering aids to the BZCY, such as NiO, to facilitate the sintering at milder temperatures. However, adding NiO or other sinter-aids usually compromises the hydration and electrical properties of the electrolyte. Additionally, electrolyte materials containing Ce exhibit relatively high proton conductivity but suffer from chemical instability[2]. Here, we developed thin Ce- and sintering aids-free BaZr0.8Y0.2O3-δ electrolyte layer using the wet powder spraying deposition. For this purpose, nanopowder was initially prepared by Pechini synthesis and consecutive milling to D50 ~ 100 nm and further processed to environmentally friendly aqueous dispersion. This dispersion was then coated onto pre-fired BZCY/NiO substrate by wet powder spraying. By adjusting the spray parameters, the thickness of the final sintered electrolyte could be controlled, with a minimum thickness as low as 1 μm. Dense electrolyte layers were achieved by tuning the sintering program. The pre-history of the substrate layer has been found to play a crucial role in the sintering and densification of the electrolyte. The microstructure, helium leakage rate and impedance of the half-cell were also characterized.
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