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@ARTICLE{Gogoi:1019574,
author = {Gogoi, Daisy and Wiemann, Carsten and Dittmann, Regina and
Schneider, Claus Michael},
title = {{R}esistive {S}witching {S}ystems: {A} {S}pectromicroscopy
{A}pproach},
journal = {Physica status solidi / A},
volume = {2300500},
issn = {1862-6300},
address = {Weinheim},
publisher = {Wiley-VCH},
reportid = {FZJ-2023-05509},
pages = {2300500},
year = {2023},
abstract = {Memristive effects, i.e., changes in the conductivity of a
nonlinear two-terminal device after a voltage or current
pulse, are of high interest for applications in novel
information technology. A crucial step in controlling
memristive effects, particularly in oxide-based systems,
involves the understanding of chemical and redox-induced
changes in the material during resistive switching
processes. Depending on the material, the switching may
occur in an areal or filamentary fashion. In both cases, the
resulting changes need to be monitored by high-resolution
techniques. In this contribution, photoemission microscopy
approaches are focused and the use and limitations of these
techniques for the detailed analysis of memristive elements
are discussed.},
cin = {PGI-6},
ddc = {530},
cid = {I:(DE-Juel1)PGI-6-20110106},
pnm = {5233 - Memristive Materials and Devices (POF4-523)},
pid = {G:(DE-HGF)POF4-5233},
typ = {PUB:(DE-HGF)16},
UT = {WOS:001116601800001},
doi = {10.1002/pssa.202300500},
url = {https://juser.fz-juelich.de/record/1019574},
}