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@ARTICLE{Gogoi:1019574,
      author       = {Gogoi, Daisy and Wiemann, Carsten and Dittmann, Regina and
                      Schneider, Claus Michael},
      title        = {{R}esistive {S}witching {S}ystems: {A} {S}pectromicroscopy
                      {A}pproach},
      journal      = {Physica status solidi / A},
      volume       = {2300500},
      issn         = {1862-6300},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2023-05509},
      pages        = {2300500},
      year         = {2023},
      abstract     = {Memristive effects, i.e., changes in the conductivity of a
                      nonlinear two-terminal device after a voltage or current
                      pulse, are of high interest for applications in novel
                      information technology. A crucial step in controlling
                      memristive effects, particularly in oxide-based systems,
                      involves the understanding of chemical and redox-induced
                      changes in the material during resistive switching
                      processes. Depending on the material, the switching may
                      occur in an areal or filamentary fashion. In both cases, the
                      resulting changes need to be monitored by high-resolution
                      techniques. In this contribution, photoemission microscopy
                      approaches are focused and the use and limitations of these
                      techniques for the detailed analysis of memristive elements
                      are discussed.},
      cin          = {PGI-6},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-6-20110106},
      pnm          = {5233 - Memristive Materials and Devices (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5233},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001116601800001},
      doi          = {10.1002/pssa.202300500},
      url          = {https://juser.fz-juelich.de/record/1019574},
}