Journal Article

FZJ-2023-05509

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Resistive Switching Systems: A Spectromicroscopy Approach

Gogoi, D.FZJ* ; Wiemann, C.FZJ* ; Dittmann, R.FZJ* ; Schneider, C. M.FZJ*

2023
Wiley-VCH Weinheim

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Please use a persistent id in citations: doi:10.1002/pssa.202300500

Abstract: Memristive effects, i.e., changes in the conductivity of a nonlinear two-terminal device after a voltage or current pulse, are of high interest for applications in novel information technology. A crucial step in controlling memristive effects, particularly in oxide-based systems, involves the understanding of chemical and redox-induced changes in the material during resistive switching processes. Depending on the material, the switching may occur in an areal or filamentary fashion. In both cases, the resulting changes need to be monitored by high-resolution techniques. In this contribution, photoemission microscopy approaches are focused and the use and limitations of these techniques for the detailed analysis of memristive elements are discussed.

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Contributing Institute(s):

1. Elektronische Eigenschaften (PGI-6)

Research Program(s):

1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)

Appears in the scientific report 2023

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Database coverage:
; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; DEAL Wiley ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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