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001021155 0247_ $$2datacite_doi$$a10.34734/FZJ-2024-00601
001021155 037__ $$aFZJ-2024-00601
001021155 1001_ $$0P:(DE-Juel1)173822$$aQiu, Depeng$$b0$$eCorresponding author
001021155 245__ $$aDevelopment of industry-scalable processes for nanocrystalline silicon oxide in silicon heterojunction solar cells
001021155 260__ $$aJülich$$bForschungszentrum Jülich GmbH Zentralbibliothek, Verlag$$c2023
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001021155 4900_ $$aSchriften des Forschungszentrums Jülich Reihe Energie & Umwelt / Energy & Environment$$v619
001021155 502__ $$aDissertation, RWTH Aachen University, 2023$$bDissertation$$cRWTH Aachen University$$d2023
001021155 520__ $$aThanks to the excellent passivation of hydrogenated amorphous silicon (a-Si:H) to wafer surface, high open circuit voltage (Voc) as well as power conversion efficiency (η) have been achieved by the silicon heterojunction (SHJ) solar cell technology in the recent decades. However, a significant parasitic absorption in doped a-Si:H results in a low short circuit current density (Jsc), limiting the cell performance of SHJ solar cells. Doped hydrogenated nanocrystalline silicon oxide (nc-SiOx:H), consisting of conductive silicon crystallites (nc-Si:H) embedded in transparent hydrogenated morphous silicon oxide (a-SiOx:H) matrix, is an attractive alternative material to the commonly used a-Si:H in SHJ solar cells to further improve the cell performance. A trade-off between the optical and the electrical properties always need to be taken into account when applying the nc-SiOx:H(n) films in SHJ solar cells. The goal of this thesis is to systematically investigate the implementation of nc-SiOx:H(n) in SHJ solar cells, to find the correlation between the material properties and the device performance, and to demonstrate the industrial applicability of nc-SiOx:H in SHJ solar cells.
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