Book/Dissertation / PhD Thesis

FZJ-2024-00601

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Development of industry-scalable processes for nanocrystalline silicon oxide in silicon heterojunction solar cells

Qiu, D. (Corresponding author)FZJ*

2023
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag Jülich
ISBN: 978-3-95806-734-9

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Please use a persistent id in citations: doi:10.34734/FZJ-2024-00601

Abstract: Thanks to the excellent passivation of hydrogenated amorphous silicon (a-Si:H) to wafer surface, high open circuit voltage (Voc) as well as power conversion efficiency (η) have been achieved by the silicon heterojunction (SHJ) solar cell technology in the recent decades. However, a significant parasitic absorption in doped a-Si:H results in a low short circuit current density (Jsc), limiting the cell performance of SHJ solar cells. Doped hydrogenated nanocrystalline silicon oxide (nc-SiOx:H), consisting of conductive silicon crystallites (nc-Si:H) embedded in transparent hydrogenated morphous silicon oxide (a-SiOx:H) matrix, is an attractive alternative material to the commonly used a-Si:H in SHJ solar cells to further improve the cell performance. A trade-off between the optical and the electrical properties always need to be taken into account when applying the nc-SiOx:H(n) films in SHJ solar cells. The goal of this thesis is to systematically investigate the implementation of nc-SiOx:H(n) in SHJ solar cells, to find the correlation between the material properties and the device performance, and to demonstrate the industrial applicability of nc-SiOx:H in SHJ solar cells.

Note: Dissertation, RWTH Aachen University, 2023

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Contributing Institute(s):

1. Photovoltaik (IEK-5)

Appears in the scientific report 2023

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