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@PHDTHESIS{Qiu:1021155,
      author       = {Qiu, Depeng},
      title        = {{D}evelopment of industry-scalable processes for
                      nanocrystalline silicon oxide in silicon heterojunction
                      solar cells},
      volume       = {619},
      school       = {RWTH Aachen University},
      type         = {Dissertation},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2024-00601},
      isbn         = {978-3-95806-734-9},
      series       = {Schriften des Forschungszentrums Jülich Reihe Energie $\&$
                      Umwelt / Energy $\&$ Environment},
      year         = {2023},
      note         = {Dissertation, RWTH Aachen University, 2023},
      abstract     = {Thanks to the excellent passivation of hydrogenated
                      amorphous silicon (a-Si:H) to wafer surface, high open
                      circuit voltage (Voc) as well as power conversion efficiency
                      (η) have been achieved by the silicon heterojunction (SHJ)
                      solar cell technology in the recent decades. However, a
                      significant parasitic absorption in doped a-Si:H results in
                      a low short circuit current density (Jsc), limiting the cell
                      performance of SHJ solar cells. Doped hydrogenated
                      nanocrystalline silicon oxide (nc-SiOx:H), consisting of
                      conductive silicon crystallites (nc-Si:H) embedded in
                      transparent hydrogenated morphous silicon oxide (a-SiOx:H)
                      matrix, is an attractive alternative material to the
                      commonly used a-Si:H in SHJ solar cells to further improve
                      the cell performance. A trade-off between the optical and
                      the electrical properties always need to be taken into
                      account when applying the nc-SiOx:H(n) films in SHJ solar
                      cells. The goal of this thesis is to systematically
                      investigate the implementation of nc-SiOx:H(n) in SHJ solar
                      cells, to find the correlation between the material
                      properties and the device performance, and to demonstrate
                      the industrial applicability of nc-SiOx:H in SHJ solar
                      cells.},
      cin          = {IEK-5},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
      doi          = {10.34734/FZJ-2024-00601},
      url          = {https://juser.fz-juelich.de/record/1021155},
}