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@PHDTHESIS{Qiu:1021155,
author = {Qiu, Depeng},
title = {{D}evelopment of industry-scalable processes for
nanocrystalline silicon oxide in silicon heterojunction
solar cells},
volume = {619},
school = {RWTH Aachen University},
type = {Dissertation},
address = {Jülich},
publisher = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
reportid = {FZJ-2024-00601},
isbn = {978-3-95806-734-9},
series = {Schriften des Forschungszentrums Jülich Reihe Energie $\&$
Umwelt / Energy $\&$ Environment},
year = {2023},
note = {Dissertation, RWTH Aachen University, 2023},
abstract = {Thanks to the excellent passivation of hydrogenated
amorphous silicon (a-Si:H) to wafer surface, high open
circuit voltage (Voc) as well as power conversion efficiency
(η) have been achieved by the silicon heterojunction (SHJ)
solar cell technology in the recent decades. However, a
significant parasitic absorption in doped a-Si:H results in
a low short circuit current density (Jsc), limiting the cell
performance of SHJ solar cells. Doped hydrogenated
nanocrystalline silicon oxide (nc-SiOx:H), consisting of
conductive silicon crystallites (nc-Si:H) embedded in
transparent hydrogenated morphous silicon oxide (a-SiOx:H)
matrix, is an attractive alternative material to the
commonly used a-Si:H in SHJ solar cells to further improve
the cell performance. A trade-off between the optical and
the electrical properties always need to be taken into
account when applying the nc-SiOx:H(n) films in SHJ solar
cells. The goal of this thesis is to systematically
investigate the implementation of nc-SiOx:H(n) in SHJ solar
cells, to find the correlation between the material
properties and the device performance, and to demonstrate
the industrial applicability of nc-SiOx:H in SHJ solar
cells.},
cin = {IEK-5},
cid = {I:(DE-Juel1)IEK-5-20101013},
typ = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
doi = {10.34734/FZJ-2024-00601},
url = {https://juser.fz-juelich.de/record/1021155},
}