001     1021732
005     20240226075406.0
037 _ _ |a FZJ-2024-00972
100 1 _ |a Junk, Yannik
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111 2 _ |a Intern. Conf. Solid State Devices and Materials
|g SSDM
|c Nagoya
|d 2023-09-05 - 2023-09-08
|w Japan
245 _ _ |a Vertical gate-all-around SiGeSn/GeSn/SiGeSn nanowire nFETs
260 _ _ |c 2023
300 _ _ |a PS 1-13
336 7 _ |a CONFERENCE_PAPER
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336 7 _ |a Conference Paper
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336 7 _ |a INPROCEEDINGS
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536 _ _ |a 5234 - Emerging NC Architectures (POF4-523)
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536 _ _ |a Verbundprojekt: Erforschung nanoelektronischer Höchstleistungs-Bauelemente für innovative Elektronik auf Basis neuer Materialsysteme - ForMikro-SiGeSn-NanoFETs - , Teilvorhaben: CVD-basierte Herstellung von SiGeSn-Halbleiterheterostrukturen und vertikalen (16ES1074)
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700 1 _ |a Concepción Díaz, Omar
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700 1 _ |a Frauenrath, Marvin
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700 1 _ |a Bärwolf, Florian
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700 1 _ |a Mai, Andreas
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700 1 _ |a Hartman, Jean-Michel
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700 1 _ |a Grützmacher, Detlev
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700 1 _ |a Buca, Dan Mihai
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700 1 _ |a Zhao, Qing-Tai
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914 1 _ |y 2023
920 1 _ |0 I:(DE-Juel1)PGI-9-20110106
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LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21