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@ARTICLE{Han:1021853,
      author       = {Han, Yi and Sun, Jingxuan and Radu, Ionut and Knoch,
                      Joachim and Grützmacher, Detlev and Zhao, Qing-Tai},
      title        = {{I}mproved performance of {FDSOI} {FET}s at cryogenic
                      temperatures by optimizing ion implantation into silicide},
      journal      = {Solid state electronics},
      volume       = {208},
      issn         = {0038-1101},
      address      = {Oxford [u.a.]},
      publisher    = {Pergamon, Elsevier Science},
      reportid     = {FZJ-2024-01002},
      pages        = {108733 -},
      year         = {2023},
      cin          = {PGI-9},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5221 - Advanced Solid-State Qubits and Qubit Systems
                      (POF4-522) / DFG project 422581876 - Kryogene CMOS
                      Technologie für die Realisierung von von klassischen
                      QuBit-Kontrollschaltkreisen (422581876)},
      pid          = {G:(DE-HGF)POF4-5221 / G:(GEPRIS)422581876},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:001080060700001},
      doi          = {10.1016/j.sse.2023.108733},
      url          = {https://juser.fz-juelich.de/record/1021853},
}