Journal Article

FZJ-2024-01002

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Improved performance of FDSOI FETs at cryogenic temperatures by optimizing ion implantation into silicide

Han, Y. (Corresponding author)FZJ* ; Sun, J.FZJ* ; Radu, I. ; Knoch, J.RWTH* ; Grützmacher, D.FZJ* ; Zhao, Q.-T.FZJ*

2023
Pergamon, Elsevier Science Oxford [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.sse.2023.108733

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 5221 - Advanced Solid-State Qubits and Qubit Systems (POF4-522) (POF4-522)
2. DFG project 422581876 - Kryogene CMOS Technologie für die Realisierung von von klassischen QuBit-Kontrollschaltkreisen (422581876) (422581876)

Appears in the scientific report 2023

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Database coverage:
; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Web of Science Core Collection

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