Hauptseite > Publikationsdatenbank > Improved performance of FDSOI FETs at cryogenic temperatures by optimizing ion implantation into silicide > print

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024 7 _ |a 10.1016/j.sse.2023.108733
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024 7 _ |a 1879-2405
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037 _ _ |a FZJ-2024-01002
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100 1 _ |a Han, Yi
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245 _ _ |a Improved performance of FDSOI FETs at cryogenic temperatures by optimizing ion implantation into silicide
260 _ _ |a Oxford [u.a.]
|c 2023
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700 1 _ |a Sun, Jingxuan
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700 1 _ |a Radu, Ionut
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700 1 _ |a Knoch, Joachim
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700 1 _ |a Grützmacher, Detlev
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700 1 _ |a Zhao, Qing-Tai
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773 _ _ |a 10.1016/j.sse.2023.108733
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