Home > Publications database > Improved performance of FDSOI FETs at cryogenic temperatures by optimizing ion implantation into silicide > print

001     1021853
005     20240226075409.0
024 7 _ |a 10.1016/j.sse.2023.108733
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024 7 _ |a 0038-1101
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024 7 _ |a 1879-2405
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037 _ _ |a FZJ-2024-01002
082 _ _ |a 620
100 1 _ |a Han, Yi
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245 _ _ |a Improved performance of FDSOI FETs at cryogenic temperatures by optimizing ion implantation into silicide
260 _ _ |a Oxford [u.a.]
|c 2023
|b Pergamon, Elsevier Science
336 7 _ |a article
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536 _ _ |a 5221 - Advanced Solid-State Qubits and Qubit Systems (POF4-522)
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536 _ _ |a DFG project 422581876 - Kryogene CMOS Technologie für die Realisierung von von klassischen QuBit-Kontrollschaltkreisen (422581876)
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700 1 _ |a Sun, Jingxuan
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700 1 _ |a Radu, Ionut
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700 1 _ |a Knoch, Joachim
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700 1 _ |a Grützmacher, Detlev
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700 1 _ |a Zhao, Qing-Tai
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773 _ _ |a 10.1016/j.sse.2023.108733
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