Contribution to a conference proceedings

FZJ-2024-01163

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Variability Reduction with Bilayer RRAM Device

Kempen, T.FZJ* ; Bende, A.FZJ* ; Sarantopoulos, A.FZJ* ; Dittmann, R.FZJ* ; Menzel, S.FZJ* ; Rana, V.FZJ*

2023

This record in other databases:

Please use a persistent id in citations: doi:10.34734/FZJ-2024-01163

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)
3. JARA Institut Green IT (PGI-10)
4. Zentralinstitut für Elektronik (ZEA-2)

Research Program(s):

1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)
2. BMBF 16ME0398K - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0398K) (BMBF-16ME0398K)

Appears in the scientific report 2023

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Database coverage:

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