Open Access

We perform photoluminescence measurements on vacancy-related emitters in hexagonal boron nitride (hBN) that are notorious for their low quantum yields. The gating of these emitters via few-layer graphene electrodes reveals a reproducible, gate-dependent brightening of the emitter, which coincides with a change in the direction of the simultaneously measured leakage current across the hBN layers. [...]

The valley degree of freedom in two-dimensional (2D) semiconductors, such as gapped bilayer graphene (BLG) and transition metal dichalcogenides, is a promising carrier of quantum information in the emerging field of valleytronics. While valley dynamics have been extensively studied for moderate band gap 2D semiconductors using optical spectroscopy techniques, very little is known about valley lifetimes in narrow band gap BLG, which is difficult to study using optical techniques. [...]

Electronic structure calculations with density functional theory (DFT) are today the most widely used technique for computational materials design. As materials design enters the artificial intelligence (AI) age, large databases of these calculations, such as the Materials Project, form the basis for creating foundation models. [...]

Thermoelectric materials for energy harvesting applications present a promising approach to reducing the overall energy consumption of modern technologies that require substantial processing power, such as machine learning. These technologies generate significant waste heat, which could be recovered to improve energy efficiency. [...]