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| Hauptseite > Publikationsdatenbank > Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function |
| Hauptseite > Publikationsdatenbank > Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function |
| Preprint | FZJ-2024-01624 |
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2023
arXiv
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Please use a persistent id in citations: doi:10.48550/ARXIV.2306.16375 doi:10.34734/FZJ-2024-01624
Abstract: The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Our all-electrical Si/SiGe shuttle device, called quantum bus (QuBus), spans a length of 10 $\mathrmμ$m and is operated by only six simply-tunable voltage pulses. It operates in conveyor-mode, i.e. the electron is adiabatically transported while confined to a moving QD. We introduce a characterization method, called shuttle-tomography, to benchmark the potential imperfections and local shuttle-fidelity of the QuBus. The fidelity of the single-electron shuttle across the full device and back (a total distance of 19 $\mathrmμ$m) is $(99.7 \pm 0.3)\,\%$. Using the QuBus, we position and detect up to 34 electrons and initialize a register of 34 quantum dots with arbitrarily chosen patterns of zero and single-electrons. The simple operation signals, compatibility with industry fabrication and low spin-environment-interaction in $^{28}$Si/SiGe, promises spin-conserving transport of spin qubits for quantum connectivity in quantum computing architectures.
Keyword(s): Mesoscale and Nanoscale Physics (cond-mat.mes-hall) ; Quantum Physics (quant-ph) ; FOS: Physical sciences
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