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@ARTICLE{Magalhes:1023074,
      author       = {Magalhães, S. and Cabaço, J. S. and Concepción, O. and
                      Buca, D. and Stachowicz, M. and Oliveira, F. and Cerqueira,
                      M. F. and Lorenz, K. and Alves, E.},
      title        = {{C}ombining x-ray real and reciprocal space mapping
                      techniques to explore the epitaxial growth of
                      semiconductors},
      journal      = {Journal of physics / D},
      volume       = {56},
      number       = {24},
      issn         = {0508-3443},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2024-01647},
      pages        = {245102 -},
      year         = {2023},
      abstract     = {In the present work, the importance of determining the
                      strain states of semiconductor compounds with high accuracy
                      is demonstrated. For the matter in question, new software
                      titled LAPAs, the acronym for LAttice PArameters is
                      presented. The lattice parameters as well as the chemical
                      composition of Al1−xInxN and Ge1−xSnx compounds grown on
                      top of GaN- and Ge- buffered c-Al2O3 and (001) oriented Si
                      substrates, respectively, are calculated via the real space
                      Bond’s method. The uncertainties in the lattice parameters
                      and composition are derived, compared and discussed with the
                      ones found via x-ray diffraction reciprocal space mapping.
                      Broad peaks lead to increased centroid uncertainty and are
                      found to constitute up to $99\%$ of the total uncertainty in
                      the lattice parameters. Refraction correction is included in
                      the calculations and found to have an impact of 0.001 Å in
                      the lattice parameters of both hexagonal and cubic
                      crystallographic systems and below $0.01\%$ in the
                      quantification of the InN and Sn contents. Although the
                      relaxation degrees of the nitride and tin compounds agree
                      perfectly between the real and reciprocal-spaces methods,
                      the uncertainty in the latter is found to be ten times
                      higher. The impact of the findings may be substantial for
                      the development of applications and devices as the intervals
                      found for the lattice match the condition of Al1−xInxN
                      grown on GaN templates vary between $∼1.8\%$
                      (0.1675–0.1859) and $0.04\%$ (0.1708–0.1712) if derived
                      via the real- and reciprocal spaces methods.},
      cin          = {PGI-9 / PTJ-ESN},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PTJ-ESN-20160331},
      pnm          = {5234 - Emerging NC Architectures (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5234},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000970634100001},
      doi          = {10.1088/1361-6463/acc597},
      url          = {https://juser.fz-juelich.de/record/1023074},
}