TY  - CONF
AU  - El Kurdi, Moustafa
AU  - Bjelajac, Andjelika
AU  - Gromovyi, Maksym
AU  - Sakat, Emilie
AU  - Ikonic, Zoran
AU  - Reboud, Vincent
AU  - Chelnokov, Alexei
AU  - Pauc, Nicolas
AU  - Calvo, Vincent
AU  - Hartmann, Jean-Michel
AU  - Buca, Dan
A3  - Reed, Graham T.
A3  - Knights, Andrew P.
TI  - GeSnOI technology enabling room temperature lasing with GeSn alloys
M1  - FZJ-2024-02449
PY  - 2023
AB  - GeSn alloys are the most promising direct band gap semiconductors to demonstrate full CMOS-compatible laser integration with a manufacturing from Group-IV materials. Since the first demonstration of lasing with GeSn alloys up to 100 K, many researches were devoted to increase the laser operation up to room temperature. We will discuss the band sructure requirements and the practical issues that have to be addressed in order to reach robust gain with increasing temperature. We show that misfit defects managment and strain engineering are key ingredients. For that purpose we developped a GeSn-On-Insulator platform, that combine strain engineering , defective interfacial layer removal and laser resonator designs ad fabrication. Here we show that room temperature lasing, up to 300 K, can be obtained in microdisk resonators fabricated on a GeSnOI layer both with using high Sn-content in the gain medium, e. g. 17% or with applying tensile strain to a layer with lower Sn-content of 14%.
T2  - Silicon Photonics XVIII
CY  - 28 Jan 2023 - 3 Feb 2023, San Francisco (United States)
Y2  - 28 Jan 2023 - 3 Feb 2023
M2  - San Francisco, United States
LB  - PUB:(DE-HGF)6
DO  - DOI:10.1117/12.2646181
UR  - https://juser.fz-juelich.de/record/1024783
ER  -