Conference Presentation (Invited)

FZJ-2024-02449

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png GeSnOI technology enabling room temperature lasing with GeSn alloys

El Kurdi, M. ; Bjelajac, A. ; Gromovyi, M. ; Sakat, E. ; Ikonic, Z. ; Reboud, V. ; Chelnokov, A. ; Pauc, N. ; Calvo, V. ; Hartmann, J.-M. ; Buca, D. (Corresponding author)FZJ* ; Reed, G. T. (Editor) ; Knights, A. P. (Editor)

2023

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Please use a persistent id in citations: doi:10.1117/12.2646181

Abstract: GeSn alloys are the most promising direct band gap semiconductors to demonstrate full CMOS-compatible laser integration with a manufacturing from Group-IV materials. Since the first demonstration of lasing with GeSn alloys up to 100 K, many researches were devoted to increase the laser operation up to room temperature. We will discuss the band sructure requirements and the practical issues that have to be addressed in order to reach robust gain with increasing temperature. We show that misfit defects managment and strain engineering are key ingredients. For that purpose we developped a GeSn-On-Insulator platform, that combine strain engineering , defective interfacial layer removal and laser resonator designs ad fabrication. Here we show that room temperature lasing, up to 300 K, can be obtained in microdisk resonators fabricated on a GeSnOI layer both with using high Sn-content in the gain medium, e. g. 17% or with applying tensile strain to a layer with lower Sn-content of 14%.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 5234 - Emerging NC Architectures (POF4-523) (POF4-523)

Appears in the scientific report 2024

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