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@INPROCEEDINGS{ElKurdi:1024783,
      author       = {El Kurdi, Moustafa and Bjelajac, Andjelika and Gromovyi,
                      Maksym and Sakat, Emilie and Ikonic, Zoran and Reboud,
                      Vincent and Chelnokov, Alexei and Pauc, Nicolas and Calvo,
                      Vincent and Hartmann, Jean-Michel and Buca, Dan},
      editor       = {Reed, Graham T. and Knights, Andrew P.},
      title        = {{G}e{S}n{OI} technology enabling room temperature lasing
                      with {G}e{S}n alloys},
      reportid     = {FZJ-2024-02449},
      year         = {2023},
      abstract     = {GeSn alloys are the most promising direct band gap
                      semiconductors to demonstrate full CMOS-compatible laser
                      integration with a manufacturing from Group-IV materials.
                      Since the first demonstration of lasing with GeSn alloys up
                      to 100 K, many researches were devoted to increase the laser
                      operation up to room temperature. We will discuss the band
                      sructure requirements and the practical issues that have to
                      be addressed in order to reach robust gain with increasing
                      temperature. We show that misfit defects managment and
                      strain engineering are key ingredients. For that purpose we
                      developped a GeSn-On-Insulator platform, that combine strain
                      engineering , defective interfacial layer removal and laser
                      resonator designs ad fabrication. Here we show that room
                      temperature lasing, up to 300 K, can be obtained in
                      microdisk resonators fabricated on a GeSnOI layer both with
                      using high Sn-content in the gain medium, e. g. $17\%$ or
                      with applying tensile strain to a layer with lower
                      Sn-content of $14\%.$},
      month         = {Jan},
      date          = {2023-01-28},
      organization  = {Silicon Photonics XVIII, San Francisco
                       (United States), 28 Jan 2023 - 3 Feb
                       2023},
      subtyp        = {Invited},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {5234 - Emerging NC Architectures (POF4-523)},
      pid          = {G:(DE-HGF)POF4-5234},
      typ          = {PUB:(DE-HGF)6},
      doi          = {10.1117/12.2646181},
      url          = {https://juser.fz-juelich.de/record/1024783},
}