guest ::
| Home > Publications database > GeSnOI technology enabling room temperature lasing with GeSn alloys > print |
| Home > Publications database > GeSnOI technology enabling room temperature lasing with GeSn alloys > print |
| 001 | 1024783 | ||
| 005 | 20250203103151.0 | ||
| 024 | 7 | _ | |a 10.1117/12.2646181 |2 doi |
| 037 | _ | _ | |a FZJ-2024-02449 |
| 100 | 1 | _ | |a El Kurdi, Moustafa |0 P:(DE-HGF)0 |b 0 |
| 111 | 2 | _ | |a Silicon Photonics XVIII |c San Francisco |d 2023-01-28 - 2023-02-03 |w United States |
| 245 | _ | _ | |a GeSnOI technology enabling room temperature lasing with GeSn alloys |
| 260 | _ | _ | |c 2023 |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a Other |2 DataCite |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
| 336 | 7 | _ | |a conferenceObject |2 DRIVER |
| 336 | 7 | _ | |a LECTURE_SPEECH |2 ORCID |
| 336 | 7 | _ | |a Conference Presentation |b conf |m conf |0 PUB:(DE-HGF)6 |s 1714556015_3947 |2 PUB:(DE-HGF) |x Invited |
| 520 | _ | _ | |a GeSn alloys are the most promising direct band gap semiconductors to demonstrate full CMOS-compatible laser integration with a manufacturing from Group-IV materials. Since the first demonstration of lasing with GeSn alloys up to 100 K, many researches were devoted to increase the laser operation up to room temperature. We will discuss the band sructure requirements and the practical issues that have to be addressed in order to reach robust gain with increasing temperature. We show that misfit defects managment and strain engineering are key ingredients. For that purpose we developped a GeSn-On-Insulator platform, that combine strain engineering , defective interfacial layer removal and laser resonator designs ad fabrication. Here we show that room temperature lasing, up to 300 K, can be obtained in microdisk resonators fabricated on a GeSnOI layer both with using high Sn-content in the gain medium, e. g. 17% or with applying tensile strain to a layer with lower Sn-content of 14%. |
| 536 | _ | _ | |a 5234 - Emerging NC Architectures (POF4-523) |0 G:(DE-HGF)POF4-5234 |c POF4-523 |f POF IV |x 0 |
| 588 | _ | _ | |a Dataset connected to CrossRef Conference |
| 700 | 1 | _ | |a Bjelajac, Andjelika |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Gromovyi, Maksym |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Sakat, Emilie |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Ikonic, Zoran |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Reboud, Vincent |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Chelnokov, Alexei |0 P:(DE-HGF)0 |b 6 |
| 700 | 1 | _ | |a Pauc, Nicolas |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a Calvo, Vincent |0 P:(DE-HGF)0 |b 8 |
| 700 | 1 | _ | |a Hartmann, Jean-Michel |0 P:(DE-HGF)0 |b 9 |
| 700 | 1 | _ | |a Buca, Dan |0 P:(DE-Juel1)125569 |b 10 |e Corresponding author |
| 700 | 1 | _ | |a Reed, Graham T. |0 P:(DE-HGF)0 |b 11 |e Editor |
| 700 | 1 | _ | |a Knights, Andrew P. |0 P:(DE-HGF)0 |b 12 |e Editor |
| 773 | _ | _ | |a 10.1117/12.2646181 |
| 909 | C | O | |o oai:juser.fz-juelich.de:1024783 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 10 |6 P:(DE-Juel1)125569 |
| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Natural, Artificial and Cognitive Information Processing |1 G:(DE-HGF)POF4-520 |0 G:(DE-HGF)POF4-523 |3 G:(DE-HGF)POF4 |2 G:(DE-HGF)POF4-500 |4 G:(DE-HGF)POF |v Neuromorphic Computing and Network Dynamics |9 G:(DE-HGF)POF4-5234 |x 0 |
| 914 | 1 | _ | |y 2024 |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 980 | _ | _ | |a conf |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a UNRESTRICTED |
| Library | Collection | CLSMajor | CLSMinor | Language | Author |
|---|