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| Home > Publications database > Electrically pumped GeSn/SiGeSn micro-rings lasers on Si with minimum threshold current of 40 mA |
| Contribution to a conference proceedings | FZJ-2024-02451 |
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2023
IEEE
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Please use a persistent id in citations: doi:10.1109/SiPhotonics55903.2023.10141949
Abstract: The characterization of electrically pumped GeSn micro-ring lasers fabricated using standard CMOS technology is presented. Micro-rings cavities with a large set of geometric design parameters are compared from the point of view of laser performance like threshold and optical emission intensity.
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