Home > Publications database > Electrically pumped GeSn/SiGeSn micro-rings lasers on Si with minimum threshold current of 40 mA > print |
001 | 1024785 | ||
005 | 20250203103151.0 | ||
024 | 7 | _ | |a 10.1109/SiPhotonics55903.2023.10141949 |2 doi |
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037 | _ | _ | |a FZJ-2024-02451 |
100 | 1 | _ | |a Liu, Teren |0 P:(DE-Juel1)186980 |b 0 |u fzj |
111 | 2 | _ | |a 2023 IEEE Silicon Photonics Conference (SiPhotonics) |c Washington |d 2023-04-04 - 2023-04-07 |w DC |
245 | _ | _ | |a Electrically pumped GeSn/SiGeSn micro-rings lasers on Si with minimum threshold current of 40 mA |
260 | _ | _ | |c 2023 |b IEEE |
300 | _ | _ | |a - |
336 | 7 | _ | |a CONFERENCE_PAPER |2 ORCID |
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520 | _ | _ | |a The characterization of electrically pumped GeSn micro-ring lasers fabricated using standard CMOS technology is presented. Micro-rings cavities with a large set of geometric design parameters are compared from the point of view of laser performance like threshold and optical emission intensity. |
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700 | 1 | _ | |a Oehme, Michael |0 P:(DE-HGF)0 |b 3 |
700 | 1 | _ | |a Witzens, Jeremy |0 P:(DE-HGF)0 |b 4 |
700 | 1 | _ | |a Capellini, Giovanni |0 P:(DE-HGF)0 |b 5 |
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773 | _ | _ | |a 10.1109/SiPhotonics55903.2023.10141949 |p - |
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