TY  - CONF
AU  - Xu, Yifan
AU  - Bednarski-Meinke, Connie
AU  - Tober, Steffen
AU  - Qdemat, Asmaa
AU  - Gunkel, Felix
AU  - Dittmann, Regina
AU  - Petracic, Oleg
AU  - Hussein, Mai
TI  - Oxygen-Vacancies-Driven Resistive Switching in Epitaxial Fe3O4 Thin Films
M1  - FZJ-2024-03301
PY  - 2024
AB  - Resistive switching implies that the device can be switched between aHigh ResistanceState (HRS) and Low Resistance State (LRS) upon application of an electricfield. Fe3O4 emerges as a candidate for resistive switching due to the sensitivityof its magnetic and electronic properties on the presence of oxygen vacancies.Here we present the preparation and characterization of epitaxial Fe3O4 thinfilms grown on TiO2 - terminated Nb:SrTiO3 via pulsed laser deposition (PLD).We observe resistive switching using I-V measurements and magnetometry. Wepropose a mechanism in which redox reactions and the presence of oxygen vacanciesare responsible for the resistive switching.This effect shows potential fornext-generation magnetoionic device applications.
T2  - 87th Annual Meeting of the DPG and DPG Spring Meeting 2024 of the Condensed Matter Section (SKM)
CY  - 17 Mar 2024 - 22 Mar 2024, TU Berlin (Germany)
Y2  - 17 Mar 2024 - 22 Mar 2024
M2  - TU Berlin, Germany
LB  - PUB:(DE-HGF)6
UR  - https://juser.fz-juelich.de/record/1026141
ER  -